Thin-film magnetic head having an electrically conducting plating base on a magnetic carrier

ABSTRACT

A thin-film magnetic head is situated on a carrier (2) on which an electrically conducting plating-base (2) is provided on which by electroplating flux conductors and a magnetically insulating layer (8) are grown. This provides a planar structure on which an electrically insulating layer and a magneto-resistance element are provided. The plating-base also constitutes the gap layer.

This is a continuation of application Ser. No. 08/139,497, filed Oct.19, 1993 abandoned, is a divisional of application Ser. No. 07/664,164,filed Mar. 4, 1991 now U.S. Pat. No. 5,284,572.

BACKGROUND OF THE INVENTION

The invention relates to a magnetic method of producing a thin-filmmagnetic head, starting from a carrier, on which a first non-magneticlayer is deposited, depositing spatially separated flux conductors, andat least between the flux conductors depositing a second non-magneticinsulating layer, whereafter on the flux conductors and the secondnon-magnetic layer an electrically insulating layer is deposited onwhich a magneto-resistance element is applied. The invention alsorelates to a thin-film magnetic head which includes a magnetic carrieron which a first magnetically insulating layer is present on which fluxconductors and a second non-magnetic layer are located, this secondnon-magnetic layer being arranged at least between the flux conductors,there being present on the flux conductors and the second magneticallyinsulating layer an electrically insulating layer on which amagneto-resistance element is provided at least facing the secondnon-magnetic layer.

A method and a thin-film magnetic head as described in the openingparagraph are disclosed in the Japanese Patent Application 62-246115A.In the prior-art magnetic head the magneto-resistance element bridges aleading and a trailing flux conductor and the magneto-resistance elementis located outside the magnetic yoke constituted by the flux conductorsand a carrier. This significantly improves the efficiency of thethin-film magnetic head compared with a magnetic head in which themagneto-resistance element is located inside the yoke between thecarrier and the flux conductors. In the prior-art method, the fluxconductors are deposited by means of sputtering and are structured by anion etching procedure. In such a method a magnetic layer which is firstdeposited, is coated by a shielding layer, for example a photoresist.This shielding layer is thereafter structured, for example by exposingthe layer selectively to light. By doing so the photoresist isdeveloped, whereafter the exposed portion is removed. Thereafter themagnetic layer can be structured by means of the ion etching procedure.The prior-art method has the disadvantage that a relatively large numberof manufacturing steps must be carried out for the formation of the fluxconductors, causing the method to be time-consuming and consequentlyrather expensive.

SUMMARY OF THE INVENTION

The invention has for an its object to provide a method of producing athin-film magnetic head by means of which a thin-film magnetic headhaving good magnetic properties and a very simple head structure may beobtained in a simple and fast manner. For this purpose the methodaccording to the invention, is characterized, in that the firstnon-magnetic layer is formed by depositing an electrically conductingplating base on the carrier. This renders it possible to apply the fluxconductors during the further method by electroplating, for which afewer number of process steps are required than in the prior-art method.

As the plating-base also constitutes the gap layer, it may be relativelythick, which is advantageous for the electroplating process and thereare no limitations to the choice of the gap length. In this respect themethod differs from prior-art electroplating processes in which the gaplength is enlarged because of the fact that an electrically conductingand magnetically non-conducting layer, serving as the basis for theelectroplating process, is deposited on the first non-magnetic layer. Itis also known to deposit an electrically as well as a magneticallyconducting layer on the first non-magnetic layer. This does not put anylimitations to the choice of the gap length, but such a layer maydisadvantageously influence the magnetic properties of the fluxconductors. An additional advantage of the method according to theinvention is that the plating-base can also function as a bias windingfor driving the magneto-resistance element.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 and 5 are cross-sectional views of intermediate products duringthe method according to the invention,

FIG. 6 is a plan view of the planarized structure of flux conductors anda magnetically insulating layer of an intermediate product,

FIG. 7 is a cross-sectional view of a first embodiment of the magnetichead according to the invention, and

FIG. 8 is a cross-sectional view of a second embodiment of the magnetichead according to the invention.

DETAILED DESCRIPTION OF THE INVENTION

An embodiment of the method according to the invention, ischaracterized, in that the flux conductors are deposited on theplating-base by electroplating. Depositing the flux conductors by meansof electroplating requires less time and is therefore also cheaper thanforming the flux conductors by means of sputtering and structuring.

An embodiment of the method according to the invention, which issuitable for growing the flux conductors by means of electroplating, ischaracterized, in that photolacquer resist walls are deposited on theplating-base before the flux conductors are applied, whereafter magneticlayer portions are applied by electroplating at least between thephotolacquer resist layers on the plating-base for the formation of atleast the flux conductors, after which the photolacquer resist walls areremoved.

For a structure in which the magneto-resistance element is locatedoutside of the yoke, it is necessary for the space between the leadingand the trailing flux conductors to be planarized. This may, forexample, be achieved by depositing an excess of insulating material bymeans of sputtering, evaporating or CVD (chemical vapour deposition),whereafter the superfluous material is removed by etching. A furthermethod, which is used in the prior-art method, is filling up the spacebetween the flux conductors by means of a spin-coating procedure anddepositing the electrically insulating layer on the flux conductor bymeans of this same procedure. These techniques for the deposition of theelectrically insulating layer are time-consuming and therefore ratherexpensive.

An embodiment of the method according to the invention, in which thesaid disadvantages do not occur, is characterized, in that the secondmagnetically insulating layer is formed by depositing an electricallyconducting magnetically insulating layer on the plating-base at leastbetween the flux conductors, by means of electroplating. This providesthe advantage that a flat layer having a constant thickness grows duringthe electroplating process. An additional advantage is the speed of theelectroplating process. A further advantage is that the electricallyfloating flux conductors of the prior-art magnetic head are nowelectrically interconnected, which results in a reduced electrical noisecaused by static charging of the flux conductors due to friction with amagnetic medium and reduces the risk of ESC (electro-static discharge).

A practical embodiment of the method according to the invention,suitable for growing the second magnetically insulating layer viaelectroplating, is characterized, in that before the photolacquer resistwalls are removed, an electrically insulating shielding layer isdeposited at least on the flux conductors, whereafter the assembly ofmagnetic layer portions, shielding layer and photolacquer resist layersare structured such, that only the flux conductors with a portion of theshielding layer upon it remains, after which further photolacquer resistlayers are deposited on the plating-base, whereafter the electricallyconducting magnetically insulating layer is deposited at least betweenthe flux conductors and the further photolacquer resist layers byelectroplating to form the second magnetically insulating layer andwhereafter the said portion of the shielding layer and the furtherphotolacquer resist walls are removed.

A further practical embodiment of the method according to the invention,is characterized, in that during the deposition of the magnetic layerportions on the plating base, magnetic layers, in addition to the fluxconductors, are also grown by electroplating on the plating base afterwhich the shielding layer is deposited on the magnetic layer portionsand the photolacquer resist walls on which shielding layer at least inthe region of the flux conductor photolacquer resist layers aredeposited, after which during structuring also the photolacquer resistlayers also are removed. The latter method has for its advantage thatthe magnetic layer portions are grown by electroplating over a largersurface area than in the embodiments previously described. Consequently,the electric current will be distributed more uniformly over the surfaceduring the procedure, causing the growth to be achieved more uniformlyand with an increased degree of controllability.

As far as the thin-film magnetic head is concerned, according to theinvention it is characterized, in that the first magnetically insulatinglayer is an electrically conducting plating-base. As the transducing gapis formed by only one layer, a well-defined gap length is obtained. Asuitable electrically conducting plating-base is, for example, an Aulayer.

A further embodiment of the thin-film magnetic head according to theinvention, is characterized, in that the second magnetically insulatinglayer consists of an electrically conducting material. Thus it ispossible to form the second magnetically insulating layer as anelectroplated layer. By making the thickness of the second magneticallyinsulating layer equal to the thickness of the flux conductors, a flatlayer is obtained, which during production is advantageous for thedeposition of the magneto-resistance element. A suitable material forthe second magnetically insulating layer is Cu.

The invention will now be described in greater detail with reference toembodiments of the method and of the thin-film magnetic head shown inthe accompanying Figures by way of example.

An embodiment of the method according to the invention employs on, as amagnetic carrier which also conducts the magnetic flux, a ferritesubstrate. On this carrier 1 a plating-base 2 of an electricallyconducting and a magnetically non-conducting material is deposited, forexample an Au base. Photolacquer resist walls 3 are deposited on theplating-base 2, after which the magnetic layer portions 4, 4a and 4b,for example of NiFe, are grown by means of electroplating on theplating-base 2. FIG. 1 is a cross-sectional view perpendicular to thecarrier 1 of the intermediate product thus obtained. In addition to theflux conductors 4a and 4b (formed from said magnetic layer portions 4aand 4b), the magnetic layer portions include also additional magneticlayers 4 for obtaining a large surface area, so that during the growingoperation an improved distribution of the electric current in theplating-base 2 is obtained and the growth is achieved with greatercontrol.

A shielding layer 5, for example a quartz layer or a photolacquer resistlayer is applied on this intermediate product, portions of these layersfunctioning as an electrical insulation of the flux conductors 4a and 4bin a later stage of the method. Photolacquer resist layers 6 whichfunction as a barrier during structuring of the composite layer areapplied on the assembly of magnetic layer portions 4, 4a and 4b,photolacquer resist walls 3 and the shielding layer 5. FIG. 2 shows anintermediate product previous to structuring and FIG. 3 shows the resultafter structuring. This structuring may for example be carried out bymeans of a wet chemical etching process. During structuring, thephotolacquer resist walls 3, the additional magnetic layers 4 and theshielding layer 5 are partly removed. The shielding layer 5 must remainon the flux conductors 4a and 4b, to prevent unwanted layers from beingformed during a subsequent electroplating operation on the fluxconductors in the further course of the method.

During the latter electroplating process a second non-magnetic layer 8is deposited. It is already sufficient to deposit this layer 8 onlybetween the flux conductors 4a and 4b. To obtain a more uniformdistribution of the current and consequently a process which can becontrolled to an improved extent, the layer 8 is preferably grown over alarger surface area. Further photolacquer resist walls 7 are firstdeposited on the plating-base 2 to define the surface on which thesecond non-magnetic layer is deposited. Thereafter the non-magneticlayer 8 is deposited until it has obtained a dimension t in a directionperpendicular to the carrier 1 equal to that of the flux conductors, asshown in FIG. 4. After removal of the shielding layer portions 5 and thefurther photolacquer resist walls 7 a planarized structure remains, asis shown in FIG. 5. An electrically insulating layer 9 and amagneto-resistance element 10 are deposited on this structure one afterthe other. The broken line 11 in the drawing indicates the location ofthe head face to be formed. This head face 14, see FIG. 7, is obtainedafter grinding of the intermediate product shown in FIG. 5. Prior togrinding a filler layer 12, for example of SiO₂, is deposited on themagnetic head structure. FIG. 7 shows the magnetic head obtained bymeans of the method described in the foregoing, the head face 14cooperating with a schematically shown magnetic information carrier 13which is movable in the directions indicated by the double arrow A.

FIG. 8 shows another embodiment of a magnetic head according to a secondmethod, which slightly deviates from the method described in theforegoing. In this second method only the flux conductors 20 and 21 aregrown by electroplating. For this purpose a plating layer 23 isdeposited on a magnetic carrier 22. The second non-magnetic layer andthe electrically insulating layer are formed together by an insulatinglayer 24 which is both magnetically and electrically insulating and ismade of, for example, SiO₂. This planarized insulating layer 24 isdeposited for example by sputtering or CVD (chemical vapor deposition),after which the superfluous material is removed by etching. Amagneto-resistance element 25, a further insulating layer 26 and afiller layer 27 are arranged one after the other on this insulatinglayer 24.

It should be noted that the invention is not limited to the embodimentsshown here, but that other embodiments are also within the scope of theinvention. Thus, the carrier need not te be composed entirely ofmagnetic material. A carrier assembled from a non-magnetic substratewith a magnetic layer deposited thereon is alternatively possible. Anembodiment in which the carrier plane of the carrier is not magneticalso belongs to the possibilities. The carrier may, for example, includea magnetic substrate, having writing windings arranged thereupon whichare covered with a non-magnetic layer, on which the plating-base is thendeposited. A magnetic head structure, having several transducing gapsnext to each other is also possible, FIG. 6 showing an intermediateproduct thereof.

We claim:
 1. A thin-film magnetic head, said head including a magneticcarrier, a first magnetically insulating layer provided on said magneticcarrier, flux conductors and a second magnetically insulating layerpresent on, and directly contacting said first magnetically insulatinglayer, said second magnetically insulating layer arranged at leastpartially between said flux conductors, an electrically insulating layerlocated on said flux conductors and on said second magneticallyinsulating layer, a magnetic resistance element present on saidelectrically insulating layer opposite at least said second magneticallyinsulating layer characterized in that said first magneticallyinsulating layer is an electrically conducting plating base.
 2. Athin-film magnetic head as claimed in claim 1, characterized in that thesecond magnetically insulating layer is made of an electricallyconducting material.
 3. A thin-film magnetic head as claimed in claim 2,characterized in that the second magnetically insulating layer is alayer obtained by electroplating.
 4. A thin-film magnetic head asclaimed in claim 2 or 3, characterized in that the dimension of thesecond magnetically insulating layer is at least substantially equal tothat of the flux conductors, taken in a direction perpendicular to theplating-base.
 5. A thin-film magnetic head as claimed in claim 3characterized in that the dimension of the second magneticallyinsulating layer, taken in a direction perpendicular to the platingbase, is at least substantially equal to that of the flux conductors. 6.A thin-film magnetic head as claimed in claim 2, characterized in thatthe second magnetically insulating layer comprises Cu.
 7. A thin-filmmagnetic head as claimed in claim 2 characterized in that the dimensionof the second magnetically insulating layer, taken in a directionperpendicular to the plating base, is at least substantially equal tothat of the flux conductors.
 8. A thin-film magnetic head as claimed inclaim 1 or 7 characterized in that the second magnetically insulatinglayer comprises Cu.